Experimental Study of 600 V Accumulationtype Lateral Double-Diffused MOSFET with Ultra-low ON-Resistance
Deng, Gaoqiang, Luo, Xiaorong, Zhao, Zheyan, Wei, Jie, Cheng, Shikang, Li, Congcong, Ma, Zhen, Zhang, Bo, Zhang, SenYear:
2020
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2020.2970006
File:
PDF, 1.64 MB
english, 2020