Analysis of an AlGaN/AlN Super-Lattice Buffer Concept for...

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IEEE Transactions on Electron Devices 2020

Analysis of an AlGaN/AlN Super-Lattice Buffer Concept for 650-V Low-Dispersion and High-Reliability GaN HEMTs

Heuken, L., Vescan, A., Burghartz, J. N., Kortemeyer, M., Ottaviani, A., Schroder, M., Alomari, M., Fahle, D., Marx, M., Heuken, M., Kalisch, H.
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Year:
2020
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2020.2968757
File:
PDF, 2.13 MB
english, 2020
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