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GaN:Eu,O-based resonant-cavity light emitting diodes with conductive AlInN/GaN distributed Bragg reflectors
Inaba, Tomohiro, Tatebayashi, Jun, Shiomi, Keishi, Timmerman, Dolf, Ichikawa, Shuhei, Fujiwara, YasufumiLanguage:
english
Journal:
ACS Applied Electronic Materials
DOI:
10.1021/acsaelm.9b00806
Date:
February, 2020
File:
PDF, 2.09 MB
english, 2020