Effect of Surface Treatment on Electrical Properties of GaN Metal Insulator-Semiconductor Devices with Al2O3 Gate Dielectric
Cai, Yu Tao, Liu, Wen, Cui, Miao, Sun, Ruize, Liang, Yung.C, Wen, Hui Qing, Yang, Li, Supardan, Siti, Mitrovic, Ivona Z., Taylor, Stephen, Chalker, Paul R., Zhao, Ce ZhouLanguage:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.35848/1347-4065/ab7863
Date:
February, 2020
File:
PDF, 1.07 MB
english, 2020