[IEEE 2019 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2019.12.7-2019.12.11)] 2019 IEEE International Electron Devices Meeting (IEDM) - Demonstration of BEOL-compatible ferroelectric Hf 0.5 Zr 0.5 O 2 scaled FeRAM co-integrated with 130nm CMOS for embedded NVM applications
Francois, T., Pellissier, C., Slesazeck, S., Havel, V., Richter, C., Makosiej, A., Giraud, B., Breyer, E. T., Materano, M., Chiquet, P., Bocquet, M., Grenouillet, L., Nowak, E., Schroeder, U., GaillarYear:
2019
DOI:
10.1109/IEDM19573.2019.8993485
File:
PDF, 613 KB
2019