Large-Scale Fabrication of Submicrometer-Gate-Length...

IEEE Transactions on Electron Devices 2020 / 3 Vol. 67; Iss. 3

Large-Scale Fabrication of Submicrometer-Gate-Length MOSFETs With a Trilayer PtSe 2 Channel Grown by Molecular Beam Epitaxy

Xiong, Kuanchen, Hwang, James C. M., Hilse, Maria, Li, Lei, Goritz, Alexander, Lisker, Marco, Wietstruck, Matthias, Kaynak, Mehmet, Engel-Herbert, Roman, Madjar, Asher
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Volume:
67
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2020.2966434
Date:
March, 2020
File:
PDF, 1.53 MB
2020
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