Accumulation-Mode Device: New Power MOSFET Breaking...

IEEE Transactions on Electron Devices 2020 / 3 Vol. 67; Iss. 3

Accumulation-Mode Device: New Power MOSFET Breaking Superjunction Silicon Limit by Simulation Study

Duan, Baoxing, Wang, Yandong, Sun, Licheng, Yang, Yintang
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Volume:
67
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2020.2968215
Date:
March, 2020
File:
PDF, 3.72 MB
2020
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