Analysis of cascaded silicon carbide MOSFETs using a single...

IET Power Electronics 2020 / 02 Vol. 13; Iss. 3

Analysis of cascaded silicon carbide MOSFETs using a single gate driver for medium voltage applications

Jørgensen, Asger Bjørn, Sønderskov, Simon Heindorf, Beczkowski, Szymon, Bidoggia, Benoît, Munk-Nielsen, Stig
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Volume:
13
Language:
english
Journal:
IET Power Electronics
DOI:
10.1049/iet-pel.2019.0573
Date:
February, 2020
File:
PDF, 3.39 MB
english, 2020
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