High-temperature electrical performances and physics-based...

IET Power Electronics 2020 / 02 Vol. 13; Iss. 3

High-temperature electrical performances and physics-based analysis of p-GaN HEMT device

Li, Sheng, Liu, Siyang, Tian, Ye, Zhang, Chi, Wei, Jiaxing, Tao, Xinyi, Li, Ningbo, Zhang, Long, Sun, Weifeng
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Volume:
13
Language:
english
Journal:
IET Power Electronics
DOI:
10.1049/iet-pel.2019.0510
Date:
February, 2020
File:
PDF, 5.63 MB
english, 2020
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