First-principles study of electronic and diffusion properties of intrinsic defects in 4H-SiC
Yan, Xiaolan, Li, Pei, Kang, Lei, Wei, Su-Huai, Huang, BingVolume:
127
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.5140692
Date:
February, 2020
File:
PDF, 1.99 MB
english, 2020