![](/img/cover-not-exists.png)
[IEEE 2019 IEEE International Symposium on Smart Electronic Systems (iSES) (Formerly iNiS) - Rourkela, India (2019.12.16-2019.12.18)] 2019 IEEE International Symposium on Smart Electronic Systems (iSES) (Formerly iNiS) - Ultra-Thin Si(1_x) Ge(x) Envelope Layer Induced Hole Quantum Well in Cylindrical Surrounding Gate p-FET with ITRS Considerations
Shafi, Nawaz, Porwal, Ankita, Parmaar, Jaydeep Singh, Bhat, Aasif Mohammad, Sahu, Chitrakant, Periasamy, C.Year:
2019
Language:
english
DOI:
10.1109/iSES47678.2019.00089
File:
PDF, 4.80 MB
english, 2019