Comprehensive Analysis of Source and Drain Recess Depth Variations on Silicon Nanosheet FETs for Sub 5-nm Node SoC Application
Jeong, Jinsu, Yoon, Jun-Sik, Lee, Seunghwan, Baek, Rock-HyunVolume:
8
Year:
2020
Language:
english
Journal:
IEEE Access
DOI:
10.1109/ACCESS.2020.2975017
File:
PDF, 485 KB
english, 2020