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Simulation of β-Ga 2 O 3 vertical Schottky diode based photodetectors revealing average hole mobility of 20âcm 2 âV â1 âs â1
Akyol, FatihVolume:
127
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.5136306
Date:
February, 2020
File:
PDF, 2.45 MB
english, 2020