[IEEE 2019 IEEE International Electron Devices Meeting...

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[IEEE 2019 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2019.12.7-2019.12.11)] 2019 IEEE International Electron Devices Meeting (IEDM) - BEOL Compatible 15-nm Channel Length Ultrathin Indium-Tin-Oxide Transistors with I on = 970 μA/μm and On/off Ratio Near 10 11 at V ds = 0.5 V

Li, Shengman, Tian, Mengchuan, Gu, Chengru, Wang, Runsheng, Wang, Mengfei, Xiong, Xiong, Li, Xuefei, Huang, Ru, Wu, Yanqing
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Year:
2019
DOI:
10.1109/IEDM19573.2019.8993488
File:
PDF, 1.79 MB
2019
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