120âMeV Ag ion irradiation induced intermixing, grain fragmentation in HfO 2 /GaO x thin films and consequent effects on the electrical properties of HfO 2 /GaO x /Si-based MOS capacitors
Vinod Kumar, K., Arun, N., Mangababu, A., Ojha, Sunil, Nageswara Rao, S. V. S., Pathak, A. P.Volume:
175
Journal:
Radiation Effects and Defects in Solids
DOI:
10.1080/10420150.2020.1718140
Date:
January, 2020
File:
PDF, 3.29 MB
2020