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Investigation on 4H-SiC gate turn-off thyristor with direct...

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Semiconductor Science and Technology 2020 / 02

Investigation on 4H-SiC gate turn-off thyristor with direct carrier extraction access to drift region for power conversion applications

Liang, Shiwei, Wang, Jun, Fang, Fang, Liu, Hangzhi, Deng, Wenjuan
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Journal:
Semiconductor Science and Technology
DOI:
10.1088/1361-6641/ab76fa
Date:
February, 2020
File:
PDF, 755 KB
2020
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