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Carrier mobility in the channel of AlGaN/(AlN)/GaN and InAlN/(AlN)/GaN heterostructures, limited by different scattering mechanisms: experiment and calculation
Arteev, D S, Sakharov, A V, Lundin, W V, Zakheim, D A, Zavarin, E E, Tsatsulnikov, A FVolume:
1400
Journal:
Journal of Physics: Conference Series
DOI:
10.1088/1742-6596/1400/7/077009
Date:
November, 2019
File:
PDF, 1.23 MB
2019