Ti/4H-SiC Schottky diode with breakdown voltage up to 3 kV
Knyaginin, D A, Rybalka, S B, Drakin, A Yu, Demidov, A AVolume:
1410
Journal:
Journal of Physics: Conference Series
DOI:
10.1088/1742-6596/1410/1/012196
Date:
December, 2019
File:
PDF, 455 KB
2019