A New Behavioral Model of Gated-Ground NMOS for Simulating...

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IEEE Access 2020

A New Behavioral Model of Gated-Ground NMOS for Simulating Snapback Characteristics

Wang, Yize, Lu, Guangyi, Wang, Yuan
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Year:
2020
Journal:
IEEE Access
DOI:
10.1109/ACCESS.2020.2972042
File:
PDF, 5.51 MB
2020
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