Investigation of Inverse Piezoelectric Effect and Trap Effect in AlGaN/GaN HEMTs Under Reverse-Bias Step Stress at Cryogenic Temperature
Zhu, Qing, Ma, Xiaohua, Hou, Bin, Wu, Mei, Zhu, Jiejie, Yang, Ling, Zhang, Meng, Hao, YueVolume:
8
Year:
2020
Journal:
IEEE Access
DOI:
10.1109/ACCESS.2020.2975118
File:
PDF, 1.32 MB
2020