Films Stoichiometry Effects on the Electronic Transport...

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Advanced Electronic Materials 2020 / 03

Films Stoichiometry Effects on the Electronic Transport Properties of Solution‐Processed Yttrium Doped Indium–Zinc Oxide Crystalline Semiconductors for Thin Film Transistor Applications

Afouxenidis, Dimitrios, Halcovitch, Nathan R., Milne, William I., Nathan, Arokia, Adamopoulos, George
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Journal:
Advanced Electronic Materials
DOI:
10.1002/aelm.201900976
Date:
March, 2020
File:
PDF, 4.52 MB
2020
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