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[IEEE 2019 IEEE 26th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Hangzhou, China (2019.7.2-2019.7.5)] 2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA) - Effect of Active Layer Thickness on Device Performance and Hot Carrier Instability in Metal Induced Crystallized Polycrystalline Silicon Thin-Film Transistors
Jiang, Zhendong, Kwok, Hoi-Sing, Zhang, Meng, Ma, Xiaotong, Yan, Yan, Li, Guijun, Deng, Sunbin, Zhou, Wei, Chen, Rongsheng, Wong, ManYear:
2019
DOI:
10.1109/ipfa47161.2019.8984842
File:
PDF, 733 KB
2019