Charge-trapping memory based on tri-layer alumina gate...

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Semiconductor Science and Technology 2020 / 03

Charge-trapping memory based on tri-layer alumina gate stack and InGaZnO channel

Ma, Pengfei, Gao, Jiacheng, Guo, Wenhao, Zhang, Guanqun, Wang, Yiming, Xin, Qian, Li, Yuxiang, Song, Aimin
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Journal:
Semiconductor Science and Technology
DOI:
10.1088/1361-6641/ab7c7a
Date:
March, 2020
File:
PDF, 1.71 MB
2020
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