Comprehensive Design of Device Parameters for GaN Vertical...

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IEEE Access 2020

Comprehensive Design of Device Parameters for GaN Vertical Trench MOSFETs

Liu, Shuang, Liu, Zhihong, Hao, Yue, Song, Xiufeng, Zhang, Jincheng, Zhao, Shenglei, Luo, Jun, Zhang, Hong, Zhang, Yachao, Zhang, Weihang, Zhou, Hong
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Year:
2020
Journal:
IEEE Access
DOI:
10.1109/ACCESS.2020.2977381
File:
PDF, 8.40 MB
2020
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