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[IEEE 2019 International Conference on Advanced Electrical Engineering (ICAEE) - Algiers, Algeria (2019.11.19-2019.11.21)] 2019 International Conference on Advanced Electrical Engineering (ICAEE) - Impact of a non-uniform p-base doping concentration on the electrical characteristics of a low power MOSFET in 4H-SiC
Bencherif, Hichem, Dehimi, Lakhdar, Pezzimenti, Fortunato, Yousfi, Abderrahim, De Martino, Giuseppe, Della Corte, Francesco G.Year:
2019
DOI:
10.1109/ICAEE47123.2019.9014701
File:
PDF, 2.26 MB
2019