Forming-free, fast, uniform, and high endurance resistive switching from cryogenic to high temperatures in W/AlOx/Al2O3/Pt bilayer memristor
Huang, Xiao-Di, Li, Yi, Li, Hao-Yang, Xue, Kan-Hao, Wang, Xingsheng, Miao, Xiang-ShuiYear:
2020
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2020.2977397
File:
PDF, 9.41 MB
2020