[IEEE 2019 IEEE 26th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Hangzhou, China (2019.7.2-2019.7.5)] 2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA) - Nanoprobing Analysis on MOSFET Current Drift Caused by Gate Oxide Defect

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