The Demonstration of 3-D Bi 2.0...

IEEE Transactions on Electron Devices 2020 / 1 Vol. 67; Iss. 1

The Demonstration of 3-D Bi 2.0 Te 2.7 Se 0.3 /Bi 0.4 Te 3.0 Sb 1.6 Thermoelectric Devices by Ionized Sputter System

Liao, M.-H., Huang, K.-C., Su, W.-J., Chen, S.-C., Lee, M.-H.
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Volume:
67
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/ted.2019.2950981
Date:
January, 2020
File:
PDF, 2.30 MB
2020
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