Investigation of Sidewall High-k Interfacial Layer Effect...

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IEEE Transactions on Electron Devices 2020

Investigation of Sidewall High-k Interfacial Layer Effect in Gate-All-Around Structure

Ryu, Donghyun, Kim, Munhyeon, Yu, Junsu, Kim, Sangwan, Lee, Jong-Ho, Park, Byung-Gook
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Year:
2020
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2020.2975255
File:
PDF, 3.62 MB
2020
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