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Uniform shallow trenches termination design for high-voltage VDMOS transistor
Li, Qi, Bao, Tingting, Li, Haiou, Sun, Tangyou, Zuo, YuanVolume:
56
Journal:
Electronics Letters
DOI:
10.1049/el.2019.2982
Date:
January, 2020
File:
PDF, 1.29 MB
2020