Improved TDDB Reliability and Interface States in 5-nm...

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Improved TDDB Reliability and Interface States in 5-nm Hf0.5Zr0.5O2 Ferroelectric Technologies Using NH₃ Plasma and Microwave Annealing

Chen, Yi-Hsuan, Su, Chun-Jung, Yang, Ting-Hsin, Hu, Chenming, Wu, Tian-Li
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Year:
2020
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2020.2973652
File:
PDF, 1.07 MB
2020
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