Defects in the GaAs and InGaAs layers grown by...

Russian Physics Journal 2006 / 12 Vol. 49; Iss. 12

Defects in the GaAs and InGaAs layers grown by low-temperature molecular-beam epitaxy

L. G. Lavrentieva, M. D. Vilisova, I. A. Bobrovnikova, I. V. Ivonin, V. V. Preobrazhenskii, V. V. Chaldyshev
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Volume:
49
Language:
english
Pages:
10
DOI:
10.1007/s11182-006-0263-x
Date:
December, 2006
File:
PDF, 311 KB
english, 2006
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