Strain relaxation, extended defects and doping effects in...

Applied Surface Science 2020 / 06 Vol. 515

Strain relaxation, extended defects and doping effects in InxGa1-xN/GaN heterostructures investigated by surface photovoltage

Cavalcoli, D., Minj, A., Fazio, M.A., Cros, A., Heuken, M.
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Volume:
515
Journal:
Applied Surface Science
DOI:
10.1016/j.apsusc.2020.146016
Date:
June, 2020
File:
PDF, 2.63 MB
2020
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