Influence of growth parameters on the morphology of GaAs...

Materials Science in Semiconductor Processing 2020 / 06 Vol. 111

Influence of growth parameters on the morphology of GaAs nanowires grown on Si (111) by molecular beam epitaxy

Arpapay, Burcu, Duygulu, Özgür, Serincan, Uğur
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
111
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2020.104990
Date:
June, 2020
File:
PDF, 1.87 MB
2020
Conversion to is in progress
Conversion to is failed