Investigation into MIS structures based on gradedband-gap...

Russian Physics Journal 2009 / 10 Vol. 52; Iss. 10

Investigation into MIS structures based on gradedband-gap hetero-epitaxial HgCdTe grown by molecular-beam epitaxy using photo-emf and conductivity methods

A. V. Voitsekhovkii, S. N. Nesmelov, S. M. Dzyadukh
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Volume:
52
Language:
english
Pages:
18
DOI:
10.1007/s11182-010-9332-2
Date:
October, 2009
File:
PDF, 507 KB
english, 2009
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