Evolution of the surface states during the in situ SiN...

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Evolution of the surface states during the in situ SiN layer formation on AlN/GaN heterostructures

Zhuravlev, Konstantin S, Mansurov, Vladimir G, Galitsyn, Yury G, Malin, Timur V, Milakhin, Denis Sergeevich, Valery, Zemlyakov
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Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/1361-6641/ab7e44
Date:
March, 2020
File:
PDF, 1.54 MB
english, 2020
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