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Thermal atomic layer etching of metallic tungsten via oxidation and etch reaction mechanism using O 2 or O 3 for oxidation and WCl 6 as the chlorinating etchant
Xie, Wenyi, Parsons, Gregory N.Volume:
38
Language:
english
Journal:
Journal of Vacuum Science & Technology A
DOI:
10.1116/1.5134430
Date:
March, 2020
File:
PDF, 2.32 MB
english, 2020