Substrate Effects in GaN-on-Silicon RF Device Technology

International Journal of High Speed Electronics and Systems 2019 / 03 Vol. 28; Iss. 01n02

Substrate Effects in GaN-on-Silicon RF Device Technology

Chandrasekar, Hareesh
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Volume:
28
Language:
english
Journal:
International Journal of High Speed Electronics and Systems
DOI:
10.1142/S0129156419400019
Date:
March, 2019
File:
PDF, 4.73 MB
english, 2019
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