HfO 2 /TiO 2...

AIP Advances 2020 / 03 Vol. 10; Iss. 3

HfO 2 /TiO 2 /HfO 2 tri-layer high-K gate oxide based MoS 2 negative capacitance FET with steep subthreshold swing

Islam, Md. Sherajul, Sadman, Shahrukh, Islam, A. S. M. Jannatul, Park, Jeongwon
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Volume:
10
Language:
english
Journal:
AIP Advances
DOI:
10.1063/1.5143939
Date:
March, 2020
File:
PDF, 3.06 MB
english, 2020
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