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[IEEE 2018 International Conference on Radiation Effects of Electronic Devices (ICREED) - Beijing, China (2018.5.16-2018.5.18)] 2018 International Conference on Radiation Effects of Electronic Devices (ICREED) - Modeling of total dose radiation effect on impact ionization rate in sub-threshold region for partially-depleted SOI NMOSFET
Qianwei, Kuang, Shanshan, Qin, Yongcheng, Ning, Dayu, Zhang, Shan, Cong, Mingchao, ChangYear:
2018
Language:
english
DOI:
10.1109/icreed.2018.8905091
File:
PDF, 586 KB
english, 2018