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[Paper] A CMOS Image Sensor with 240 μV/e– Conversion Gain, 200 ke– Full Well Capacity, 190-1000 nm Spectral Response and High Robustness to UV light
Nasuno, Satoshi, Wakashima, Shunichi, Kusuhara, Fumiaki, Kuroda, Rihito, Sugawa, ShigetoshiVolume:
4
Year:
2016
Language:
english
Journal:
ITE Transactions on Media Technology and Applications
DOI:
10.3169/mta.4.116
File:
PDF, 4.63 MB
english, 2016