Extraction of admittance parameters of symmetrically doped...

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Microsystem Technologies 2020 / 3

Extraction of admittance parameters of symmetrically doped AlGaN/GaN/AlGaN DH-HEMT for microwave frequency applications

Chugh, Nisha, Kumar, Manoj, Bhattacharya, Monika, Gupta, R. S.
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Language:
english
Journal:
Microsystem Technologies
DOI:
10.1007/s00542-020-04805-w
Date:
March, 2020
File:
PDF, 883 KB
english, 2020
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