Influence of Orientation of a Silicon Substrate with a...

Physics of the Solid State 2019 / 12 Vol. 61; Iss. 12

Influence of Orientation of a Silicon Substrate with a Buffer Silicon Carbide Layer on Dielectric and Polar Properties of Aluminum Nitride Films

Sergeeva, O. N., Solnyshkin, A. V., Kiselev, D. A., Il’ina, T. S., Kukushkin, S. A., Sharofidinov, Sh. Sh., Kaptelov, E. Yu., Pronin, I. P.
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Volume:
61
Language:
english
Journal:
Physics of the Solid State
DOI:
10.1134/s1063783419120485
Date:
December, 2019
File:
PDF, 746 KB
english, 2019
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