[IEEE 2019 IEEE International Electron Devices Meeting...

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[IEEE 2019 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2019.12.7-2019.12.11)] 2019 IEEE International Electron Devices Meeting (IEDM) - Design-Technology Co-Optimization of Anti-Fuse Memory on Intel 22nm FinFET Technology

Chao, Yu-Lin, Su, Chen-Yi, Ramey, Stephen M., Bhattacharya, Uddalak, Sell, Bernhard, Zhang, Ying, Kulkarni, Sarvesh H., Cha, Soonwoo, Paulson, Leif R., Rajarshi, Salil M., Bloomstrom, Jason, Liu, Guan
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Year:
2019
Language:
english
DOI:
10.1109/iedm19573.2019.8993612
File:
PDF, 768 KB
english, 2019
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