Admittance of metal-insulator-semiconductor devices based on HgCdTe nBn structures
Voitsekhovskii, Alexander, Nesmelov, Sergey N, Dzyadukh, Stanislav M, Dvoretsky, Sergey Alekseevich, Mikhailov, N, Sidorov, Georgiy, Yakushev, Maxim VitalievichLanguage:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/1361-6641/ab7beb
Date:
March, 2020
File:
PDF, 4.78 MB
english, 2020