Interface-Controlled Self-Align Source/Drain Ge p-Channel...

Japanese Journal of Applied Physics 2011 / 1 Vol. 50

Interface-Controlled Self-Align Source/Drain Ge p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated Using Thermally Oxidized GeO 2 Interfacial Layers

Nakakita, Yosuke, Nakakne, Ryosho, Sasada, Takashi, Takenaka, Mitsuru, Takagi, Shinichi
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Volume:
50
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.50.010109
Date:
January, 2011
File:
PDF, 1.19 MB
english, 2011
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