Low On-Resistance H-Diamond MOSFETs With 300 °C ALD-Al 2 O 3 Gate Dielectric
Ren, Zeyang, He, Qi, Xu, Jiamin, Yuan, Guansheng, Zhang, Jinfeng, Zhang, Jincheng, Su, Kai, Hao, YueVolume:
8
Year:
2020
Language:
english
Journal:
IEEE Access
DOI:
10.1109/access.2020.2979985
File:
PDF, 2.56 MB
english, 2020