Correction: High-performance optoelectronic memory based on...

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Journal of Materials Chemistry C 2020

Correction: High-performance optoelectronic memory based on bilayer MoS 2 grown by Au catalyst

Yang, Fengyou, Chen, Shengyao, Feng, Huimin, Wang, Cong, Wang, Xiaofeng, Wang, Shu, Zhou, Zhican, Li, Bo, Ma, Lijun, Yang, Haiguang, Xie, Yong, Liu, Qian
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Year:
2020
Language:
english
Journal:
Journal of Materials Chemistry C
DOI:
10.1039/D0TC90064H
File:
PDF, 1.36 MB
english, 2020
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