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[IEEE 2019 Device Research Conference (DRC) - Ann Arbor, MI, USA (2019.6.23-2019.6.26)] 2019 Device Research Conference (DRC) - Highly-Doped Through-Contact Silicon Epi Design at 3 nm node
Mittal, S., Pal, A., Saremi, M., Ferrell, J., Haverty, M., Miyashita, T., Kim, N., Bazizi, E. M., Alexander, B., Sachid, A. B., Ayyagari, B.Year:
2019
Language:
english
DOI:
10.1109/DRC46940.2019.9046479
File:
PDF, 5.12 MB
english, 2019