Analysis of Transferred MoS 2...

ECS Journal of Solid State Science and Technology 2020 / 04 Vol. 9; Iss. 9

Analysis of Transferred MoS 2 Layers Grown by MOCVD: Evidence of Mo Vacancy Related Defect Formation

Schoenaers, B., Leonhardt, A., Mehta, A. N., Stesmans, A., Chiappe, D., Asselberghs, I., Radu, I., Huyghebaert, C., De Gendt, S., Houssa, M., Afanas’ev, V. V.
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Volume:
9
Journal:
ECS Journal of Solid State Science and Technology
DOI:
10.1149/2162-8777/ab8363
Date:
April, 2020
File:
PDF, 1.42 MB
2020
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